skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Creators/Authors contains: "Glavin, Nicholas R"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission (g2(0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors. 
    more » « less
    Free, publicly-accessible full text available December 1, 2025
  2. Abstract Developing characterization strategies to better understand nanoscale features in two-dimensional nanomaterials is of crucial importance, as the properties of these materials are many times driven by nanoscale and microscale chemical and structural modifications within the material. For the case of large area monolayer MoSe2flakes, kelvin probe force microscopy coupled with tip-enhanced photoluminescence was utilized to evaluate such features including internal grain boundaries, edge effects, bilayer contributions, and effects of oxidation/aging, many of which are invisible to topographical mapping. A reduction in surface potential due ton-type behavior was observed at the edge of the flakes as well as near grain boundaries. Potential phase mapping, which corresponds to the local dielectric constant, depicted local biexciton and trion states in optically-active regions of interest such as grain boundaries. Finally, nanoscale surface potential and photoluminescence mapping was performed at several stages of oxidation, revealing that various oxidative states can be evaluated during the aging process. Importantly, all of the characterization performed in this study was non-destructive and rapid, crucial for quality evaluation of an exciting class of two-dimensional nanomaterials. 
    more » « less
  3. null (Ed.)